BLC9G10XS-120AZ

BLC9G10XS-120AZ

$50.73
  • Description:RF MOSFET LDMOS 28V SOT1273-1
  • Series:-

SKU:07cbaad09efc Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1273-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:920MHz ~ 960MHz
  • Gain:21dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:120 mA
  • Power - Output:120W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1273-1
  • Supplier Device Package:SOT1273-1
  • Configuration:Dual

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BLC9G10XS-120AZ

Overview

The BLC9G10XS-120A is a 120 W LDMOS power transistor designed for base station applications in the 920 MHz to 960 MHz frequency range. It features a drain-source voltage of 65 V and operates at a typical quiescent current of 120 mA with a 28 V supply. In a Doherty configuration, it delivers an average output power of 18 W with a gain of 20 dB and drain efficiency of 50%. The device exhibits low thermal resistance (0.349 K/W) and supports high ruggedness against load mismatches up to 10:1 VSWR.

Feature Summary

  • Designed for broadband operation with low memory effects to support excellent pre-distortability
  • Lower output capacitance optimized for improved performance in Doherty amplifier configurations
  • Internally matched structure integrated with ESD protection for ease of use and reliability

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications within the 920 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation before procurement. Confirm that the component meets RoHS compliance requirements as stated in the product details. Ensure handling procedures adhere to ESD sensitivity classifications C2A and HBM Class 2 to prevent damage during assembly.

Selection Notes

Select this component for designs requiring high efficiency and ruggedness in asymmetrical Doherty architectures. Verify impedance matching networks using the provided load-pull data for both main and peak devices. Ensure the application environment maintains case temperatures within specified limits to preserve reliability and thermal stability.

Part Context

This part belongs to the BLC9G10XS series of power LDMOS transistors manufactured by Ampleon. It is engineered specifically for wireless infrastructure, targeting the UMTS/IMT-2000 bands. The device utilizes an air cavity plastic earless flanged package (SOT1273-1) to facilitate efficient heat dissipation and robust mechanical mounting in base station modules.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitutes. Cross-reference pinout compatibility and thermal characteristics when evaluating alternative components.

BLC9G10XS-120AZBLC9G10XS-120AZ
$50.73
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