BLC9G20XS-160AVZ

Overview

The BLC9G20XS-160AV is a 160 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It operates with a drain-source voltage of 30 V and features an air cavity plastic earless flanged package (SOT1275-1). The device provides a typical power gain of 16.4 dB, drain efficiency up to 46%, and peak output power of 190 W under pulsed conditions. It includes integrated ESD protection and exhibits excellent ruggedness, supporting load mismatches up to 10:1 VSWR.

Feature Summary

• Asymmetric design optimized for high efficiency across the operating band
• Low thermal resistance ensuring excellent thermal stability
• Internally matched structure for simplified circuit integration
• Integrated electrostatic discharge protection

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 1990 MHz range
• Asymmetric Doherty amplifier architectures

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package version and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm that the received units match the SOT1275-1 package outline specifications before integration into production designs.

Selection Notes

Select this component for wideband base station designs requiring asymmetric Doherty configurations. The internal matching network simplifies impedance transformation requirements. Verify that the application environment supports the specified junction temperature limits and thermal management capabilities required for sustained operation at maximum power levels.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for telecommunications infrastructure. It utilizes lateral diffusion technology to deliver high linearity and efficiency in multi-carrier environments. The device is specifically tailored for modern cellular base station architectures demanding robust performance within defined frequency bands.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without validating pinout compatibility, impedance characteristics, and thermal specifications against the original datasheet requirements.