BLC9G24XS-170AVZ

Overview

The BLC9G24XS-170AV is a 170 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2300 MHz to 2400 MHz range. It operates at VDS = 30 V with an average output power of 28 W, achieving a typical drain efficiency of 45% and power gain of 15.5 dB under 1-carrier W-CDMA conditions. The device features separate main and peak devices with dedicated gate and drain pins. It utilizes an air cavity plastic earless flanged package (SOT1275-1) and includes integrated ESD protection compliant with CDM Class 2A and HBM Class 2 standards.

Feature Summary

• Designed for low memory effects to provide excellent pre-distortability
• Internally matched structure for ease of use
• Decoupling leads enable improved video bandwidth performance
• Lower output capacitance optimizes performance in Doherty configurations

Applications

• RF power amplifier for W-CDMA base stations
• Multi-carrier applications in the 2300 MHz to 2400 MHz frequency range

Procurement Notes

Verify component authenticity by checking for original factory seals and matching datasheet revision numbers. Confirm compliance with Directive 2002/95/EC regarding hazardous substances. Ensure handling procedures adhere to ANSI/ESD S20.20 standards due to electrostatic sensitivity. Validate that the specific ordering suffix matches the required package version SOT1275-1 before finalizing acquisition.

Selection Notes

Select this component for asymmetrical Doherty architectures requiring high ruggedness against load mismatches up to 10:1 VSWR. Verify thermal management capabilities against the specified junction-to-case resistance values. Ensure the design accommodates the specific impedance requirements for both main and peak devices across the 2300 MHz to 2400 MHz band. Confirm compatibility with 3GPP test model 1 signal characteristics.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio targeting cellular infrastructure. It is specifically engineered for the 2300 MHz to 2400 MHz spectrum, distinguishing itself through optimized internal matching and decoupling structures. The device supports modern base station modulation schemes while maintaining robust operation under high peak-to-average ratio conditions.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.