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The BLF2043F,135 is a silicon N-channel enhancement mode lateral D-MOS transistor designed for UHF broadband applications up to 2.2 GHz. It operates in a flange-mounted SOT467C package with the source connected to the mounting base. Key electrical parameters include a drain-source voltage of 65 V, a maximum DC drain current of 2.2 A, and a junction temperature rating of 200 °C. In a common source class-AB configuration at 26 V and 85 mA quiescent current, it delivers 10 W PEP output power with greater than 11 dB gain and over 30% drain efficiency.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm RoHS compliance requirements prior to procurement. Ensure that the component is handled using anti-static precautions during transport and assembly to prevent electrostatic discharge damage.
Select this component for designs requiring a single-ended LDMOS transistor with a flange-mount interface. The device is optimized for operation within the HF to 2.2 GHz bandwidth. Designers must account for the thermal resistance from junction to mounting base when calculating heatsink requirements for continuous wave operation.
This part belongs to the BLF2043 family of UHF power LDMOS transistors originally developed by Philips Semiconductors. Following the corporate restructuring on December 7, 2015, the RF Power division became Ampleon, which now manages the product line and associated datasheets.
The BLF2043F/T3 is an alternative version of this component manufactured by NXP Semiconductors. Verify pinout compatibility and absolute maximum ratings before substituting.