SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon BLF2425M7L250P is a 250 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It is optimized for high-power continuous wave (CW) operations. The device operates with a drain-source voltage of 28 V and delivers 250 W output power with a typical gain of 15 dB and drain efficiency of 51%. It features a junction temperature rating up to 225 °C and a thermal resistance from junction to case of 0.19 K/W. The component is available in flanged balanced ceramic packages SOT539A and SOT539B.
Verify the specific package variant required for the design, as the BLF2425M7L250P corresponds to the flanged version (SOT539A) while the BLF2425M7LS250P is the earless version (SOT539B). Confirm RoHS compliance status and ensure handling precautions for electrostatic sensitive devices are followed during assembly and testing procedures.
Select this component for designs requiring 250 W output power in the 2.4 GHz ISM band. Ensure the thermal management system can maintain the case temperature within limits to support the 0.19 K/W thermal resistance. Verify that the load impedance matches the typical values provided for the target frequency to achieve the specified gain and efficiency metrics.
This part belongs to the BLF2425M7 series of power LDMOS transistors manufactured by Ampleon. The series includes variants such as the BLF2425M7LS250P, which shares identical electrical specifications but differs in the physical package configuration. These components are engineered for robust performance in industrial RF environments.
The BLF2425M7LS250P serves as a direct functional substitute with identical electrical characteristics, differing only in the earless SOT539B package compared to the flanged SOT539A package of the BLF2425M7L250P.