BLF245,112

BLF245,112

  • Description:RF MOSFET 28V CRFM4
  • Series:-

SKU:e69206177fa1 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 28V CRFM4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:175MHz
  • Gain:15.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):6A
  • Noise Figure:2dB
  • Current - Test:50 mA
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-123A
  • Supplier Device Package:CRFM4
  • Configuration:N-Channel

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BLF245,112

Overview

The BLF245,112 is a silicon N-channel enhancement mode vertical D-MOS transistor manufactured by Ampleon USA Inc. Designed for large signal amplifier applications in the VHF frequency range, it utilizes a 4-lead SOT123A flange package with a ceramic cap. Key electrical parameters include a drain-source voltage of 65 V and a total power dissipation of 68 W at 25 °C mounting base temperature. In class-B operation at 175 MHz with a 28 V supply, it delivers 30 W output power with greater than 13 dB gain and over 50% drain efficiency.

Feature Summary

  • High power gain and low noise figure suitable for VHF amplification
  • Capable of withstanding full load mismatch conditions
  • Features good thermal stability and easy power control

Applications

  • Large signal amplifier applications in the VHF frequency range
  • Broadcast transmitter systems operating in the VHF band
  • Class-B RF power amplification circuits

Procurement Notes

Verify the specific ordering suffix to ensure correct gate-source voltage grouping if matched devices are required for your design. Confirm that the component handling procedures account for the beryllium oxide content within the ceramic cap. Ensure proper disposal methods are established as chemical or special waste according to local regulations after product use.

Selection Notes

Select this component for VHF applications requiring robust performance under mismatched load conditions. The device supports both 12.5 V and 28 V drain supply voltages, offering flexibility for different power levels. Consider the thermal resistance values when designing the heatsink interface to maintain junction temperature within the specified 200 °C limit during continuous operation.

Part Context

This part belongs to the Ampleon VHF power MOS transistor family. It was originally released under Philips Semiconductors specifications before the brand transition to Ampleon in December 2015. The BLF245 is distinct from other LDMOS transistors in its vertical D-MOS technology and specific SOT123A packaging configuration optimized for high-power VHF usage.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

BLF245,112BLF245,112

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