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The BLF245,112 is a silicon N-channel enhancement mode vertical D-MOS transistor manufactured by Ampleon USA Inc. Designed for large signal amplifier applications in the VHF frequency range, it utilizes a 4-lead SOT123A flange package with a ceramic cap. Key electrical parameters include a drain-source voltage of 65 V and a total power dissipation of 68 W at 25 °C mounting base temperature. In class-B operation at 175 MHz with a 28 V supply, it delivers 30 W output power with greater than 13 dB gain and over 50% drain efficiency.
Verify the specific ordering suffix to ensure correct gate-source voltage grouping if matched devices are required for your design. Confirm that the component handling procedures account for the beryllium oxide content within the ceramic cap. Ensure proper disposal methods are established as chemical or special waste according to local regulations after product use.
Select this component for VHF applications requiring robust performance under mismatched load conditions. The device supports both 12.5 V and 28 V drain supply voltages, offering flexibility for different power levels. Consider the thermal resistance values when designing the heatsink interface to maintain junction temperature within the specified 200 °C limit during continuous operation.
This part belongs to the Ampleon VHF power MOS transistor family. It was originally released under Philips Semiconductors specifications before the brand transition to Ampleon in December 2015. The BLF245 is distinct from other LDMOS transistors in its vertical D-MOS technology and specific SOT123A packaging configuration optimized for high-power VHF usage.
No public confirmed substitute part numbers are available in the provided documentation.