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The BLF571,112 is a 20 W LDMOS RF transistor designed for broadcast and industrial applications in the HF and VHF bands. It operates with a drain-source voltage of 50 V and delivers an average output power of 20 W at 225 MHz. The device achieves a typical power gain of 27.5 dB and a drain efficiency of 70% under continuous wave conditions. It features a flanged ceramic SOT467C package with two mounting holes and two leads. The component supports broadband operation from 10 MHz to 500 MHz and includes integrated ESD protection.
Verify the specific ordering suffix against the manufacturer's current product data sheet to ensure correct package configuration and compliance status. Confirm that the supplier provides documentation matching the Ampleon BLF571#3 revision. Ensure proper ESD handling protocols are followed during transport and assembly due to the device's sensitivity to static electricity.
Select this component for designs requiring high efficiency and power gain in the HF and VHF spectrum. The flanged ceramic package facilitates effective heat dissipation for continuous wave operations. Verify that the application circuit can maintain the specified drain-source voltage and quiescent current limits to ensure optimal performance and longevity.
The BLF571 belongs to the Ampleon LDMOS power transistor family, which utilizes laterally diffused metal-oxide semiconductor technology. This series is engineered for robust performance in radio frequency power amplification. The device represents a transition from previous Philips Semiconductors branding to Ampleon, maintaining established specifications for broadcast and industrial use cases.
Consult the official Ampleon datasheet for verified substitute part numbers. Cross-reference pin configurations and thermal characteristics when evaluating alternatives.