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The BLF6G20-45 is a 45 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates at a supply voltage of 28 V with a drain-source breakdown voltage of 65 V and a maximum junction temperature of 225 °C. In typical two-carrier W-CDMA operation, it delivers an average output power of 2.5 W per carrier with a power gain of 19.2 dB and drain efficiency of 14%. The device features integrated ESD protection and is internally matched for ease of use.
Verify the specific package variant required, as the BLF6G20-45 corresponds to the SOT608A flanged ceramic package with mounting holes. Confirm that the ordering suffix matches the intended physical configuration before finalizing procurement orders to ensure compatibility with existing thermal management designs.
Select this component for wideband RF power amplifier designs requiring high efficiency and ruggedness in the 1800 MHz to 2000 MHz band. Ensure the application environment supports the specified 28 V supply voltage and that thermal resistance limits are respected to maintain junction temperatures within the 225 °C maximum rating during continuous operation.
This part belongs to the BLF6G series of LDMOS power transistors manufactured by Ampleon USA Inc. The BLF6G20S-45 is the earless flanged variant (SOT608B) sharing identical electrical specifications but differing in mechanical package construction. Both variants target similar cellular infrastructure amplifier requirements.
The BLF6G20S-45 serves as a direct functional replacement with identical electrical characteristics, differing only in the SOT608B earless flanged package instead of the SOT608A flanged package with mounting holes.