BLF6G20LS-140,112

BLF6G20LS-140,112

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:73aac9341afd Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.93GHz ~ 1.99GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):39A
  • Noise Figure:-
  • Current - Test:1:00 AM
  • Power - Output:35.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF6G20LS-140,112

Overview

The BLF6G20LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 35.5 W per carrier in 2-carrier W-CDMA mode. The device provides a typical power gain of 16.5 dB, drain efficiency of 30%, IMD3 of -37 dBc, and ACPR of -40 dBc at Tcase = 25 °C. It features a maximum drain-source breakdown voltage of 65 V, gate-source threshold voltage of 2 V typ, and thermal resistance from junction to case of 0.49 K/W.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
  • Multi carrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or official channels. Confirm RoHS compliance status as specified in the product data sheet. Ensure proper ESD handling protocols are followed during transport and assembly due to integrated protection sensitivity. Validate package type SOT502B earless flanged ceramic packaging matches design requirements before procurement.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 1800 MHz and 2000 MHz. Ensure thermal management supports the 0.49 K/W junction-to-case resistance under class-AB operation conditions. Verify that system voltage limits do not exceed the 65 V drain-source breakdown rating. Consider internal matching network integration when designing input and output circuits for optimal performance.

Part Context

This part belongs to the Ampleon LDMOS power transistor family optimized for cellular infrastructure. It utilizes laterally diffused metal oxide semiconductor technology to deliver high linearity and efficiency. The device is specifically engineered for multi-carrier base station environments requiring robust performance across wide bandwidths without external matching components.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Cross-reference electrical parameters including power output, frequency range, and package dimensions before substitution.

BLF6G20LS-140,112BLF6G20LS-140,112

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