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The BLF6G22L-40P is a power LDMOS transistor designed for base station applications in the 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz frequency bands. It operates with a drain-source voltage of 28 V and a quiescent current of 410 mA. In 2-carrier W-CDMA mode at 2110 MHz to 2170 MHz, it delivers an average output power of 13.5 W with a typical gain of 19 dB and drain efficiency of 30%. For 1-carrier W-CDMA in the same band, it provides 15 W output power with 19 dB gain and 32% efficiency. The device features a flanged SOT1121A ceramic package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant selection. Confirm RoHS compliance status as required by project specifications. Check for any product change notices or obsolescence alerts directly from Ampleon before finalizing procurement plans.
Select this component for base station designs requiring high ruggedness and thermal stability in Class AB operation. Ensure the application circuit can handle the specified VSWR conditions up to 10:1. Verify that the PCB layout matches the recommended test circuit parameters for optimal RF performance.
This part belongs to the BLF6G22LS series of power LDMOS transistors manufactured by Ampleon USA Inc. It is specifically engineered for wireless infrastructure, offering robust performance in multi-carrier environments. The device utilizes a ceramic package suitable for high-power dissipation and reliable mounting in base station modules.
Consult the official Ampleon datasheet for direct substitute part numbers within the BLF6G22LS family. Evaluate alternative LDMOS transistors only if they match the exact pinout, package dimensions, and electrical characteristics defined in the original specification.