BLF6G22LS-100,112

BLF6G22LS-100,112

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:b3b52adabf6b Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:18.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):29A
  • Noise Figure:-
  • Current - Test:950 mA
  • Power - Output:25W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF6G22LS-100,112

Overview

The BLF6G22LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It features an internally matched design and integrated ESD protection within an earless flanged SOT502B ceramic package. In typical 2-carrier W-CDMA operation at 28 V supply voltage, it delivers 25 W average output power with 18.2 dB gain, 29% drain efficiency, -37 dBc IMD3, and -41 dBc ACPR. The device exhibits excellent ruggedness, supporting a VSWR of 10:1 under specified conditions.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 2000 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Confirm RoHS compliance status as required by local regulations. Ensure proper ESD precautions are implemented during storage and assembly due to the integrated protection sensitivity.

Selection Notes

Select this component for broadband operations between 2000 MHz and 2200 MHz requiring high thermal stability. The internal matching network simplifies circuit design compared to unmatched alternatives. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for continuous wave or high peak power applications.

Part Context

This part belongs to the BLF series of power LDMOS transistors manufactured by Ampleon USA Inc. The BLF6G22LS-100 specifically targets UMTS/W-CDMA infrastructure markets. It utilizes advanced LDMOS technology optimized for linearity and efficiency in multi-carrier environments.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. Designers should verify pinout compatibility and electrical parameters when considering alternative manufacturers' components for the SOT502B package.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF6G22LS-100 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

Does the device include electrostatic discharge protection?

Yes, the BLF6G22LS-100 features integrated ESD protection.

What is the recommended package type?

The device is housed in an earless flanged LD MOST ceramic package, designated as SOT502B.

BLF6G22LS-100,112BLF6G22LS-100,112

Click on the inquiry