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The BLF6G22LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It features an internally matched design and integrated ESD protection within an earless flanged SOT502B ceramic package. In typical 2-carrier W-CDMA operation at 28 V supply voltage, it delivers 25 W average output power with 18.2 dB gain, 29% drain efficiency, -37 dBc IMD3, and -41 dBc ACPR. The device exhibits excellent ruggedness, supporting a VSWR of 10:1 under specified conditions.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Confirm RoHS compliance status as required by local regulations. Ensure proper ESD precautions are implemented during storage and assembly due to the integrated protection sensitivity.
Select this component for broadband operations between 2000 MHz and 2200 MHz requiring high thermal stability. The internal matching network simplifies circuit design compared to unmatched alternatives. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for continuous wave or high peak power applications.
This part belongs to the BLF series of power LDMOS transistors manufactured by Ampleon USA Inc. The BLF6G22LS-100 specifically targets UMTS/W-CDMA infrastructure markets. It utilizes advanced LDMOS technology optimized for linearity and efficiency in multi-carrier environments.
No official substitute part numbers are documented in the provided datasheet. Designers should verify pinout compatibility and electrical parameters when considering alternative manufacturers' components for the SOT502B package.
The BLF6G22LS-100 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.
Yes, the BLF6G22LS-100 features integrated ESD protection.
The device is housed in an earless flanged LD MOST ceramic package, designated as SOT502B.