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The BLF6G38-10 is a 10 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3600 MHz frequency range. It operates with a supply voltage of 28 V and delivers an average output power of 2 W under single-carrier N-CDMA conditions, achieving a typical power gain of 14 dB and drain efficiency of 20%. The device features integrated ESD protection and is qualified for a maximum drain-source voltage of 32 V. It utilizes an earless flanged ceramic package (SOT975B) with a thermal resistance from junction to case of 4.0 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant. The BLF6G38-10 corresponds to the SOT975B earless flanged ceramic package. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts directly from Ampleon before finalizing procurement plans.
Select this component for designs requiring a 10 W LDMOS transistor operating between 3400 MHz and 3600 MHz. Ensure the application circuit supports a 28 V supply and can maintain the recommended case temperature of 25 °C during testing. Verify that the load impedance matches the specified test circuit values for optimal performance in class-AB operation.
This device belongs to Ampleon's portfolio of WiMAX power LDMOS transistors. It is engineered specifically for broadband operations in wireless communication infrastructure. The BLF6G38-10 shares functional similarities with other models in the series but is distinctively optimized for the 3.4 GHz to 3.6 GHz spectrum.
Consult the official Ampleon datasheet for confirmed substitute part numbers. No direct cross-compatibility claims are made without explicit manufacturer verification. Evaluate thermal management requirements and pinout compatibility if considering alternative packages such as the SOT975C variant.