BLF6G38-25,112

BLF6G38-25,112

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-

SKU:f01a9155c191 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:15dB
  • Voltage - Test:28 V
  • Current Rating (Amps):8.2A
  • Noise Figure:-
  • Current - Test:225 mA
  • Power - Output:4.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-608A
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLF6G38-25,112

Overview

The BLF6G38-25 is a 25 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3800 MHz frequency range. It operates at a supply voltage of 28 V with a typical drain current of 225 mA. In single carrier N-CDMA mode, it delivers an average output power of 4.5 W, achieving a power gain of 15 dB and a drain efficiency of 24%. The device features integrated ESD protection and internal matching for ease of use. It supports WiMAX signals and exhibits excellent ruggedness, withstanding a VSWR of 10:1 through all phases.

Feature Summary

  • Internally matched for simplified circuit design
  • Integrated electrostatic discharge (ESD) protection
  • High thermal stability and ruggedness under mismatched load conditions

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 3400 MHz to 3800 MHz range
  • WiMAX power amplification

Procurement Notes

Verify the specific package variant required for the design, as the BLF6G38-25 corresponds to the SOT608A flanged ceramic package with mounting holes, while the BLF6G38S-25 uses the SOT608B earless flanged package. Confirm RoHS compliance status and ensure the ordering suffix matches the intended physical configuration before finalizing procurement documentation.

Selection Notes

Select this component for broadband operations between 3400 MHz and 3800 MHz requiring high efficiency and linearity. Ensure the thermal management system can maintain the case temperature at 25 °C for optimal performance metrics. Verify that the application environment does not exceed the absolute maximum ratings, particularly the 65 V drain-source voltage and 200 °C junction temperature limits.

Part Context

This device belongs to Ampleon's portfolio of LDMOS power transistors tailored for wireless infrastructure. It is part of a series including the BLF6G38S-25, which shares identical electrical characteristics but differs in package construction. The product is manufactured by Ampleon, a global provider of RF and power semiconductor solutions.

Replacement Considerations

The BLF6G38S-25 serves as a direct functional equivalent with identical electrical specifications but utilizes the SOT608B earless flanged package instead of the SOT608A. Designers must verify mechanical fit and mounting hole alignment when substituting between these two variants.

BLF6G38-25,112BLF6G38-25,112

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