BLF6G38-50,135

Overview

The BLF6G38-50 is a 50 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3800 MHz frequency range. It operates with a supply voltage of 28 V and features an internal gate bias resistor. The device delivers a typical peak output power of 70 W, a power gain of 14 dB, and a drain efficiency of 23% at 9 W average load power. It is qualified for a maximum drain-source voltage of 32 V and includes integrated ESD protection. The component utilizes a flanged ceramic SOT502A package.

Feature Summary

• Designed for broadband operation within the 3.4 GHz to 3.8 GHz range
• Features excellent ruggedness capable of withstanding high VSWR mismatches
• Includes integrated ESD protection for handling safety
• Internally matched for simplified circuit integration

Applications

• RF power amplifiers for base stations
• Multicarrier applications in the 3400 MHz to 3800 MHz range
• WiMAX power amplification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status and check for any recent product change notices that may affect pinout or thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high efficiency and linearity in the 3.4–3.8 GHz band. Ensure the application circuit supports the required 28 V supply and manages the thermal resistance from junction to case effectively. Verify input impedance matching networks align with the specified test circuit impedances for optimal performance.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors derived from NXP Semiconductors' legacy. It is specifically engineered for cellular infrastructure and wireless communication systems. The BLF6G38-50 represents a specialized solution for wideband base station amplification requirements.

Replacement Considerations

Consult official Ampleon documentation for direct cross-references. No public substitute part numbers are confirmed in the provided datasheet. Evaluate alternative models based on identical frequency ranges, power output capabilities, and package dimensions if replacement is necessary.

FAQ

What is the maximum drain-source voltage rating?

The device is qualified for a maximum VDS operation of 32 V.

Does the BLF6G38-50 include internal matching components?

Yes, the transistor is internally matched to facilitate ease of use in amplifier designs.

What is the typical power gain at 9 W average load power?

The typical power gain is 14 dB when operating at an average load power of 9 W.