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The BLF7G15LS-200 is a 200 W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1600 mA, delivering an average output power of 50 W with a typical power gain of 19.5 dB and drain efficiency of 29% under two-carrier W-CDMA conditions. The device features a maximum drain-source breakdown voltage of 65 V and a thermal resistance from junction to case of 0.30 K/W. It utilizes an earless flanged ceramic package (SOT 502B) with two leads.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm that the component meets all absolute maximum rating limits during design validation. Ensure proper thermal management is implemented to maintain junction temperature within specified operational boundaries.
Select this component for wideband RF power amplifier designs requiring high ruggedness and low thermal resistance. Evaluate impedance matching networks using the provided typical impedance data at target frequencies. Consider the internal matching capabilities when designing input and output circuits for the intended application bandwidth.
This part belongs to the BLF7G series of LDMOS power transistors manufactured by Ampleon. The series targets cellular infrastructure markets, specifically focusing on base station transmitter modules. The BLF7G15LS-200 variant is optimized for the 1450 MHz to 1550 MHz band, distinguishing it from other models covering different frequency ranges or power levels.
Consult official Ampleon documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical specifications before considering alternative devices. Cross-compatibility claims should be avoided unless explicitly supported by manufacturer data.