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The BLF7G22L-200 is a 200 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. In a typical 2-carrier W-CDMA test circuit at Tcase = 25 °C, it delivers an average output power of 55 W with a power gain of 18.5 dB, a drain efficiency of 31%, and an ACPR of -31 dBc. The device features a flanged ceramic package (SOT502A) with two mounting holes and two leads.
Verify the specific ordering suffix against official Ampleon documentation to confirm the exact package variant. The standard suffix indicates the SOT502A flanged ceramic package with mounting holes. Confirm RoHS compliance status and check for any recent product change notices or obsolescence announcements directly from the manufacturer before finalizing procurement plans.
Select this component for high-power RF amplifier designs requiring operation within the 2110 MHz to 2170 MHz band. Ensure the application supports the required 28 V supply and 1620 mA bias current. Verify that the system can accommodate the SOT502A package dimensions and mounting requirements. Evaluate thermal management solutions to maintain junction temperature within the specified limits during continuous wave and modulated signal operations.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF7G22LS-200, which utilizes the SOT502B earless flanged package. These devices are engineered specifically for telecommunications infrastructure, offering robust performance metrics suitable for demanding base station environments.
The BLF7G22LS-200 serves as a direct functional equivalent but utilizes the SOT502B earless flanged package instead of the SOT502A. Substitution requires verifying mechanical fitment due to the absence of mounting ears on the SOT502B variant. Electrical characteristics remain consistent between the two package versions.