BLF7G24LS-140,112

Overview

The BLF7G24LS-140 is a 140 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates at VDS = 28 V with IDq = 1300 mA, delivering an average output power of 50 W in single carrier W-CDMA mode and 30 W in IS-95 mode. The device features a drain-source breakdown voltage of 65 V, a forward transconductance of 1.87 S, and a thermal resistance from junction to case of 0.28 K/W. It utilizes the SOT502B earless flanged ceramic package.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Low Rth providing excellent thermal stability
• Designed for low memory effects providing excellent digital pre-distortion capability

Applications

• RF power amplifiers for base stations in the 2300 MHz to 2400 MHz frequency range
• Multi-carrier applications
• Single carrier IS-95 systems
• W-CDMA systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as required by local regulations. Ensure that the procurement channel provides valid traceability for this RF power component.

Selection Notes

Select the BLF7G24LS-140 variant when an earless flanged ceramic package (SOT502B) is required for the design. Verify that the application environment supports the specified 28 V drain-source voltage and 1300 mA quiescent current requirements for optimal performance.

Part Context

This component belongs to the Ampleon BLF7G24L series of LDMOS power transistors. The LS suffix specifically denotes the SOT502B earless flanged package variant, distinguishing it from the standard flanged version which includes mounting holes.

Replacement Considerations

The BLF7G24L-140 serves as the primary alternative within the same product family. When considering replacements, verify that the substitute matches the SOT502B package dimensions and electrical characteristics defined in the official datasheet.