BLF7G24LS-160P,112

BLF7G24LS-160P,112

$96.53
  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-

SKU:3d615e3eb882 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tube
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.2 A
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

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BLF7G24LS-160P,112

Overview

The BLF7G24LS-160P,112 is an LDMOS power transistor manufactured by Ampleon USA Inc., designed for high-efficiency RF power amplification. It operates within the 824 MHz to 960 MHz frequency range and is packaged in a SOT539A housing. Key electrical parameters include a drain-source breakdown voltage of 65 V and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. The device exhibits a typical forward transconductance of 13.7 S and a low on-resistance of 0.081 Ω. With a maximum drain current capacity between 28 A and 34.2 A, it supports robust performance in multi-carrier applications.

Feature Summary

  • Optimized thermal management through low thermal resistance design for stable operation
  • High efficiency conversion suitable for demanding multi-carrier RF environments
  • Robust construction ensuring reliability in base station power amplifier stages

Applications

  • W-CDMA cellular base station power amplifiers
  • Multi-carrier RF power amplifier modules
  • Broadband RF signal generation systems

Procurement Notes

Verify the complete part number including the trailing suffix against official Ampleon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent product change notices or obsolescence alerts before finalizing procurement plans.

Selection Notes

Select this component when designing for W-CDMA bands requiring high linearity and efficiency. Ensure the circuit layout accommodates the SOT539A package dimensions and provides adequate thermal sinking. Verify that the biasing network matches the specified gate threshold and drain voltage requirements for optimal performance.

Part Context

This device belongs to the Ampleon BLF7G series of LDMOS transistors, which are engineered for wireless infrastructure. The series is characterized by its ability to handle high power densities while maintaining signal integrity in complex modulation schemes used in modern telecommunications networks.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Do not assume cross-compatibility with other series without verifying pinout, thermal characteristics, and electrical limits. Generic replacements may not meet the specific linearity and efficiency requirements of W-CDMA applications.

BLF7G24LS-160P,112BLF7G24LS-160P,112
$96.53
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