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The BLF7G24LS-160P,112 is an LDMOS power transistor manufactured by Ampleon USA Inc., designed for high-efficiency RF power amplification. It operates within the 824 MHz to 960 MHz frequency range and is packaged in a SOT539A housing. Key electrical parameters include a drain-source breakdown voltage of 65 V and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. The device exhibits a typical forward transconductance of 13.7 S and a low on-resistance of 0.081 Ω. With a maximum drain current capacity between 28 A and 34.2 A, it supports robust performance in multi-carrier applications.
Verify the complete part number including the trailing suffix against official Ampleon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent product change notices or obsolescence alerts before finalizing procurement plans.
Select this component when designing for W-CDMA bands requiring high linearity and efficiency. Ensure the circuit layout accommodates the SOT539A package dimensions and provides adequate thermal sinking. Verify that the biasing network matches the specified gate threshold and drain voltage requirements for optimal performance.
This device belongs to the Ampleon BLF7G series of LDMOS transistors, which are engineered for wireless infrastructure. The series is characterized by its ability to handle high power densities while maintaining signal integrity in complex modulation schemes used in modern telecommunications networks.
Consult official Ampleon substitution guides for verified alternatives. Do not assume cross-compatibility with other series without verifying pinout, thermal characteristics, and electrical limits. Generic replacements may not meet the specific linearity and efficiency requirements of W-CDMA applications.