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The BLF861A,112 is a silicon N-channel enhancement mode lateral D-MOS push-pull transistor manufactured by Ampleon USA Inc. It operates in the UHF frequency range with an internal input and output matching network designed for broadband performance. The device utilizes a SOT540A flanged ceramic package where the common source connects to the mounting flange. Key electrical parameters include a drain-source voltage of 65 V, a total power dissipation of 318 W at 25 °C, and a junction temperature limit of 200 °C. In Class-AB operation at 860 MHz with a 32 V supply, it delivers a typical continuous wave output power of 150 W with a gain exceeding 13.5 dB.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability for this component. Confirm thermal interface requirements align with the specified mounting base resistance values before finalizing orders.
Select this component for UHF applications requiring robust push-pull LDMOS performance. Evaluate the thermal management system to maintain the junction temperature below the 200 °C maximum limit. Consider the 65 V drain-source breakdown voltage when designing the biasing and supply circuitry for the target operating frequency.
This part belongs to the Ampleon BLF series of UHF power LDMOS transistors. Originally developed under Philips Semiconductors, the product line was transitioned to Ampleon in December 2015. The BLF861A represents an improved version regarding ruggedness compared to its predecessor, maintaining the same form factor and electrical characteristics for seamless integration into existing designs.
The BLF861A is explicitly documented as an improved version of the BLF861 regarding ruggedness. Verify if the original BLF861 datasheet confirms identical pinning and electrical limits before substituting.