BLF861A,112

BLF861A,112

  • Description:RF MOSFET LDMOS 32V LDMOST
  • Series:-

SKU:df3c096c4884 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:14.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):18A
  • Noise Figure:-
  • Current - Test:1:00 AM
  • Power - Output:150W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-540A
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

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BLF861A,112

Overview

The BLF861A,112 is a silicon N-channel enhancement mode lateral D-MOS push-pull transistor manufactured by Ampleon USA Inc. It operates in the UHF frequency range with an internal input and output matching network designed for broadband performance. The device utilizes a SOT540A flanged ceramic package where the common source connects to the mounting flange. Key electrical parameters include a drain-source voltage of 65 V, a total power dissipation of 318 W at 25 °C, and a junction temperature limit of 200 °C. In Class-AB operation at 860 MHz with a 32 V supply, it delivers a typical continuous wave output power of 150 W with a gain exceeding 13.5 dB.

Feature Summary

  • Push-pull configuration with integrated input and output matching networks for high gain and broadband operation
  • Source connection on the underside eliminates the need for DC isolators and reduces common mode inductance
  • High ruggedness capability designed to withstand abrupt load mismatch errors and VSWR conditions up to 10:1

Applications

  • Communication transmitter applications in the UHF frequency range
  • PAL BG television broadcasting transmitters
  • Broadband RF power amplification circuits

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability for this component. Confirm thermal interface requirements align with the specified mounting base resistance values before finalizing orders.

Selection Notes

Select this component for UHF applications requiring robust push-pull LDMOS performance. Evaluate the thermal management system to maintain the junction temperature below the 200 °C maximum limit. Consider the 65 V drain-source breakdown voltage when designing the biasing and supply circuitry for the target operating frequency.

Part Context

This part belongs to the Ampleon BLF series of UHF power LDMOS transistors. Originally developed under Philips Semiconductors, the product line was transitioned to Ampleon in December 2015. The BLF861A represents an improved version regarding ruggedness compared to its predecessor, maintaining the same form factor and electrical characteristics for seamless integration into existing designs.

Replacement Considerations

The BLF861A is explicitly documented as an improved version of the BLF861 regarding ruggedness. Verify if the original BLF861 datasheet confirms identical pinning and electrical limits before substituting.

BLF861A,112BLF861A,112

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