BLF872,112

Overview

The BLF872,112 is a 300 W LDMOS RF power transistor designed for broadcast and industrial applications. It delivers 250 W broadband output across the UHF band (470 MHz to 860 MHz). Key electrical parameters include a drain-source voltage of 32 V, peak envelope power of 300 W, and gain of 15 dB at 860 MHz. The device features internal input and output matching, source-on-underside construction, and advanced flange material for thermal reliability.

Feature Summary

• Internal input and output matching networks ensure high gain and optimized broadband performance across the UHF spectrum.
• Source connection on the underside eliminates the need for DC isolators, thereby reducing common-mode inductance.
• Advanced flange material provides superior thermal behavior and enhanced operational reliability.
• High ruggedness allows operation under significant load mismatches without failure.

Applications

• Communication transmitter applications in the UHF band
• Industrial applications in the UHF band
• Digital TV (DVB-T) transmitters

Procurement Notes

Verify component authenticity through authorized Ampleon channels or certified distributors. Confirm package integrity and ESD protection status upon receipt. Cross-reference ordering suffixes with official documentation to ensure correct variant selection. Request current product lifecycle status as specifications may evolve.

Selection Notes

Select this component for UHF broadband transmitter designs requiring high power density. Ensure heatsink temperature management aligns with junction temperature limits. Verify bias conditions match the specified quiescent current requirements for optimal linearity and efficiency.

Part Context

This device belongs to the Philips Semiconductors (now Ampleon) LDMOS family. It utilizes the SOT800-1 flanged ceramic package. The technology supports high-power RF generation with robust performance characteristics suitable for demanding broadcast environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume cross-compatibility with other LDMOS families without specific manufacturer confirmation.

FAQ

What is the maximum load mismatch the BLF872 can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under rated power conditions.

How does the BLF872 handle DC isolation?

The source is connected on the underside, which eliminates the need for external DC isolators and reduces common-mode inductance.

What is the typical gain at 860 MHz?

The typical power gain (Gp) is 15 dB at 860 MHz with a drain-source voltage of 32 V.