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The BLF888AS,112 is a 600 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications. It operates in the UHF band from 470 MHz to 860 MHz with a drain-source voltage of 50 V. The device features an internal input matching network for high gain and broadband operation. Key electrical parameters include a typical power gain of 21 dB, a quiescent drain current of 1.3 A, and a thermal resistance (junction-to-case) of 0.15 K/W. It exhibits excellent ruggedness, supporting a VSWR of at least 40:1 through all phases.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package configuration. Confirm RoHS compliance status and export control classifications prior to procurement. Ensure that the sourcing channel provides valid traceability for this semiconductor component.
Select this component for designs requiring high power output in the 470 MHz to 860 MHz range. Consider the SOT539B earless flanged ceramic package for mounting constraints. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance for continuous wave or pulsed operation modes.
This part belongs to the Ampleon BLF888 series of UHF power LDMOS transistors. The BLF888AS variant specifically utilizes the SOT539B package, which is an earless flanged balanced ceramic package with four leads. It serves as the counterpart to the BLF888A, which uses the SOT539A package with two mounting holes.
The BLF888A is the primary alternative within the same product family, differing only in the package type (SOT539A vs. SOT539B). Verify mechanical footprint compatibility before substitution.