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The BLF898SU is a 900 W LDMOS RF power transistor designed for broadcast Doherty, class AB transmitter, and ISM applications. It operates at VDS = 50 V with an average output power of 180 W per section in a class AB broadband configuration. The device features a drain-source breakdown voltage of 124 V and a quiescent drain current of 900 mA per section. It provides a typical power gain of 20 dB and a drain efficiency of 32% at 800 MHz. The component is housed in a SOT539B earless flanged balanced ceramic package.
Verify the specific ordering suffix to confirm the package variant. The 'S' designation indicates the SOT539B earless flanged balanced ceramic package, which differs from the standard SOT539A version. Confirm RoHS compliance status and ensure handling precautions are followed due to ESD sensitivity classification C2A/2.
Select this component for UHF band applications requiring high power output and excellent ruggedness. Ensure the design supports the required thermal management, as the junction-to-case thermal resistance is 0.12 K/W. Verify that the application environment accommodates the specified maximum junction temperature of 225 °C and storage temperature range.
The BLF898SU belongs to Ampleon's UHF power LDMOS transistor portfolio. It is specifically engineered for high-efficiency digital and analog transmitter applications. The device complements other models in the series by offering robust performance in broadcast and ISM sectors, utilizing advanced LDMOS technology for reliability.
The BLF898 (SOT539A package) serves as the primary alternative within the same product family. Verify mechanical mounting requirements, as the BLF898SU lacks ears compared to the BLF898.