BLF8G09LS-400PWJ

BLF8G09LS-400PWJ

$73.82
  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-

SKU:f47ec4e02f2a Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:718.5MHz ~ 725.5MHz
  • Gain:20.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:3.4 A
  • Power - Output:95W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1242B
  • Supplier Device Package:CDFM8
  • Configuration:Dual, Common Source

Download product information

BLF8G09LS-400PWJ

Overview

The BLF8G09LS-400PW is a 400 W LDMOS power transistor designed for base station applications in the 716 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 95 W under typical two-carrier W-CDMA test conditions. The device features a maximum drain-source breakdown voltage of 65 V, a junction-to-case thermal resistance of 0.26 K/W, and a power gain of 20.6 dB. It utilizes an earless flanged ceramic package (SOT1242B) with eight leads.

Feature Summary

  • Designed for broadband operation with low memory effects to facilitate excellent pre-distortability
  • Features decoupling leads that enable improved video bandwidth for enhanced performance
  • Optimized for Doherty applications through lower output capacitance
  • Capable of operating with supply current delivered through the video leads

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 716 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific package variant required for the design, as the datasheet covers both the straight lead BLF8G09LS-400PW and the gull-wing BLF8G09LS-400PGW. Confirm compliance with RoHS Directive 2002/95/EC requirements. Ensure handling procedures account for ElectroStatic Discharge sensitivity as outlined in the manufacturer's guidelines.

Selection Notes

Select this component for high-power RF amplification tasks requiring ruggedness against load mismatches up to 7:1 VSWR. Consider the internal matching and integrated ESD protection for simplified circuit integration. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance for the intended operating environment.

Part Context

This part belongs to the BLF8 series of power LDMOS transistors manufactured by Ampleon USA Inc. The BLF8G09LS-400PW specifically denotes the version with an earless flanged ceramic package (SOT1242B). It shares core electrical characteristics with the gull-wing variant BLF8G09LS-400PGW but differs in physical lead configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

BLF8G09LS-400PWJBLF8G09LS-400PWJ
$73.82
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