BLF8G10L-160,118

Overview

The BLF8G10L-160 is a 160 W LDMOS power transistor designed for base station applications in the 920 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and a quiescent current of 1100 mA, delivering an average output power of 35 W. The device provides a typical power gain of 19.7 dB and a drain efficiency of 29% under two-carrier W-CDMA test conditions. It features a thermal resistance from junction to case of 0.50 K/W and is housed in a flanged SOT502A ceramic package.

Feature Summary

• Designed for broadband operation across the 920 MHz to 960 MHz spectrum
• Internally matched for ease of use and integrated ESD protection
• Lower output capacitance optimized for improved performance in Doherty applications
• Low memory effects providing excellent pre-distortability

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 920 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts prior to finalizing procurement plans.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular infrastructure. Ensure the design accommodates the required 30 V supply and manages thermal dissipation effectively given the 0.50 K/W junction-to-case resistance.

Part Context

This part belongs to the Ampleon BLF8 series of LDMOS power transistors. It is specifically engineered for wideband coverage in the 900 MHz band, serving as a core active element for modern multi-standard base station transmitter modules.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same family. Verify that any substitute maintains the required 160 W output capability and matches the SOT502A footprint.