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The BLF8G20LS-220 is a 220 W LDMOS power transistor designed for base station applications operating between 1800 MHz and 2000 MHz. It utilizes an earless flanged ceramic package (SOT502B) with two leads. The device operates at a drain-source voltage of 28 V with a quiescent current of 1600 mA, delivering 55 W average output power in a 2-carrier W-CDMA test configuration. Key electrical parameters include a typical power gain of 18.9 dB, a drain efficiency of 34%, and a thermal resistance from junction to case of 0.27 K/W.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration. Ensure proper ESD handling protocols are followed during storage and assembly due to electrostatic sensitivity.
Select this component for broadband RF power amplifier designs requiring high efficiency and low memory effects. Verify that the application circuit supports the specified 28 V drain voltage and 1600 mA quiescent current. Ensure the host system provides adequate heat sinking to maintain the junction temperature below the 225 °C maximum limit under continuous operation.
This part belongs to the BLF8G20 series of LDMOS power transistors manufactured by Ampleon USA Inc. The BLF8G20LS-220 specifically targets the 1800 MHz to 2000 MHz band, distinguishing it from other variants in the family that may operate at different frequencies or power levels. It shares the SOT502B package form factor common to this product line.
Consult official Ampleon substitution guides for verified replacements. No public substitute part numbers are confirmed in the provided source material.