BLF8G20LS-400PVU

BLF8G20LS-400PVU

$68.12
  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-

SKU:5716e1cf4e15 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:19dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:3.4 A
  • Power - Output:95W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1242B
  • Supplier Device Package:CDFM8
  • Configuration:Dual, Common Source

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BLF8G20LS-400PVU

Overview

The BLF8G20LS-400PVU is a 400 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1995 MHz frequency range. It features decoupling leads that provide an improved typical video bandwidth of 120 MHz. The device operates with a drain-source voltage of 65 V and delivers 95 W output power at 28 V, achieving a typical drain efficiency of 28% and a power gain of 19 dB under 2-carrier W-CDMA test conditions. It utilizes an earless flanged ceramic package (SOT1242B/C) with gull-wing design optimization.

Feature Summary

  • Decoupling leads enable improved video bandwidth for enhanced signal fidelity
  • Lower output capacitance improves performance in Doherty amplifier configurations
  • Internally matched structure simplifies circuit integration and reduces design complexity
  • Integrated ESD protection ensures robust handling and operational reliability

Applications

  • RF power amplifiers for base stations operating between 1805 MHz and 1995 MHz
  • Multi-carrier applications utilizing 3GPP test models
  • Doherty amplifier architectures requiring low memory effects

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm the exact pin configuration and lead style. Confirm compliance with Directive 2002/95/EC regarding hazardous substances. Ensure proper electrostatic discharge precautions are implemented during handling due to the sensitivity of the LDMOS technology.

Selection Notes

Select this component for broadband operations requiring high efficiency and low thermal resistance. Verify impedance matching requirements using the provided load-pull data for the specific frequency within the 1805 MHz to 1995 MHz band. Ensure the application supports class-AB operation with appropriate heat sinking to manage junction temperatures up to 225 °C.

Part Context

This part belongs to the LS-400 series of power LDMOS transistors from Ampleon. The series is characterized by optimized ruggedness and low memory effects, making it suitable for complex modulation schemes used in modern wireless communication infrastructure.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Cross-referencing should be limited to verified equivalents listed in manufacturer replacement guides.

BLF8G20LS-400PVUBLF8G20LS-400PVU
$68.12
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