SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF8G22LS-270 is a 270 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates at a drain-source voltage of 28 V with a quiescent current of 2400 mA. The device provides a typical power gain of 17.7 dB and a drain efficiency of 30% under two-carrier W-CDMA test conditions. It features an earless flanged ceramic package (SOT502B) with a junction-to-case thermal resistance of 0.26 K/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration into final designs. Check for any product change notices or obsolescence alerts directly from Ampleon sales channels.
Select this component for broadband RF power amplifier designs requiring high efficiency and linearity in the 2110 MHz to 2170 MHz band. Ensure the application circuit can maintain the specified case temperature of 25 °C during testing. Verify that the design accommodates the required gate-source threshold voltage and quiescent current settings for optimal performance.
This device belongs to the BLF8G22 series of LDMOS power transistors manufactured by Ampleon USA Inc. It utilizes an earless flanged ceramic package designated as SOT502B, which facilitates mounting on heatsinks. The part is specifically engineered for cellular infrastructure, offering improved performance characteristics over previous generations in multi-carrier environments.
Consult the official Ampleon datasheet for direct replacements or updated versions within the BLF8G22 family. Verify pinout compatibility and thermal characteristics when considering alternative packages such as SOT1244 variants.