BLF8G22LS-270J

BLF8G22LS-270J

$76.97
  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:a2ebc28fe0d7 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:17.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:2.4 A
  • Power - Output:80W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF8G22LS-270J

Overview

The BLF8G22LS-270 is a 270 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates at a drain-source voltage of 28 V with a quiescent current of 2400 mA. The device provides a typical power gain of 17.7 dB and a drain efficiency of 30% under two-carrier W-CDMA test conditions. It features an earless flanged ceramic package (SOT502B) with a junction-to-case thermal resistance of 0.26 K/W.

Feature Summary

  • Excellent ruggedness capable of withstanding high load mismatch
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance optimized for Doherty applications
  • Designed for low memory effects to facilitate pre-distortion

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2110 MHz to 2170 MHz range
  • 3GPP test model 1 compliant systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration into final designs. Check for any product change notices or obsolescence alerts directly from Ampleon sales channels.

Selection Notes

Select this component for broadband RF power amplifier designs requiring high efficiency and linearity in the 2110 MHz to 2170 MHz band. Ensure the application circuit can maintain the specified case temperature of 25 °C during testing. Verify that the design accommodates the required gate-source threshold voltage and quiescent current settings for optimal performance.

Part Context

This device belongs to the BLF8G22 series of LDMOS power transistors manufactured by Ampleon USA Inc. It utilizes an earless flanged ceramic package designated as SOT502B, which facilitates mounting on heatsinks. The part is specifically engineered for cellular infrastructure, offering improved performance characteristics over previous generations in multi-carrier environments.

Replacement Considerations

Consult the official Ampleon datasheet for direct replacements or updated versions within the BLF8G22 family. Verify pinout compatibility and thermal characteristics when considering alternative packages such as SOT1244 variants.

BLF8G22LS-270JBLF8G22LS-270J
$76.97
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