BLF8G24LS-100VU

Overview

The BLF8G24LS-100V is a 100 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features improved video bandwidth and low memory effects for excellent pre-distortability. The device operates with a drain-source voltage of 28 V and a quiescent current of 900 mA, delivering an average output power of 25 W per carrier in two-carrier W-CDMA configurations. Key electrical parameters include a typical power gain of 19 dB, drain efficiency of 32%, and an adjacent channel power ratio (ACPR) of -29 dBc at 5 MHz spacing. The transistor exhibits high ruggedness, supporting a load mismatch of VSWR = 10:1.

Feature Summary

• Decoupling leads enable improved video bandwidth of 90 MHz typical
• Lower output capacitance improves performance in Doherty applications
• Internally matched design facilitates ease of use
• Integrated ESD protection ensures handling safety

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2300 MHz to 2400 MHz frequency range

Procurement Notes

Verify the specific package variant required for the design, as the BLF8G24LS-100V corresponds to the SOT1244B earless flanged ceramic package, while the BLF8G24LS-100GV uses the SOT1244C version. Confirm RoHS compliance status and check the latest product status on the manufacturer's website, as specifications may be updated. Ensure proper ESD precautions are observed during handling due to the sensitivity of the component.

Selection Notes

Select this component for broadband operations requiring high efficiency and low thermal resistance. The device is optimized for class-AB operation with test signals such as 3GPP model 1. Designers should account for the specific impedance values provided for source and load matching at 2300 MHz, 2400 MHz, and 2500 MHz to achieve optimal performance metrics like gain and linearity.

Part Context

This part belongs to the BLF8 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series is characterized by robust construction and suitability for demanding RF power amplifier environments. The BLF8G24LS-100V specifically targets the 2.3 GHz band, offering a balance of power output and linearity for modern communication standards.

Replacement Considerations

The BLF8G24LS-100GV serves as a direct functional equivalent within the same family, differing primarily in the package outline (SOT1244C versus SOT1244B). Both variants share identical electrical characteristics and pinouts, allowing for potential substitution if mechanical footprint constraints permit the alternative package style.

FAQ

What is the typical video bandwidth of the BLF8G24LS-100V?

The device typically achieves a video bandwidth of 90 MHz, measured as the IMD third-order intermodulation inflection point in a class-AB test circuit.

Can the BLF8G24LS-100V withstand high load mismatches?

Yes, it can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified conditions of VDS = 28 V, IDq = 900 mA, and PL = 100 W at 2300 MHz.

What is the maximum junction temperature for continuous use?

The maximum junction temperature (Tj) is 225 °C, although continuous use at maximum temperature will affect reliability.