BLF8G27LS-100V,118

BLF8G27LS-100V,118

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-

SKU:940f67958b9d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:17dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:25W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1244B
  • Supplier Device Package:CDFM6
  • Configuration:-

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BLF8G27LS-100V,118

Overview

The BLF8G27LS-100V is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems like 3GPP test model 1 with 64 DPCH. The device operates at VDS = 28 V and IDq = 900 mA, delivering 25 W output power with 17 dB gain and 28% drain efficiency. It includes integrated ESD protection and decoupling leads that provide a typical video bandwidth of 110 MHz.

Feature Summary

  • Decoupling leads enable improved video bandwidth for enhanced signal fidelity
  • Low thermal resistance provides excellent thermal stability under high load conditions
  • Internally matched design simplifies circuit integration and reduces component count
  • Integrated ESD protection safeguards against electrostatic discharge damage

Applications

  • RF power amplifiers for base stations operating in the 2500 MHz to 2700 MHz band
  • Multi-carrier applications utilizing 3GPP test models
  • Doherty amplifier configurations requiring low output capacitance

Procurement Notes

Verify the specific package version required for your design, as the BLF8G27LS-100V corresponds to the SOT1244B earless flanged ceramic package. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts from Ampleon before finalizing procurement plans.

Selection Notes

Select this component when designing broadband RF power amplifiers for cellular infrastructure. Ensure the application supports class-AB operation at 28 V and requires ruggedness against VSWR mismatches up to 10:1. Verify that the PCB layout accommodates the SOT1244B footprint and thermal requirements.

Part Context

This part belongs to the BLF8 series of LDMOS transistors by Ampleon USA Inc., optimized for wireless communication infrastructure. It shares architectural similarities with the BLF8G27LS-100GV but utilizes the SOT1244B package instead of SOT1244C. Both variants target the same 2.5 GHz to 2.7 GHz spectrum for modern base station deployments.

Replacement Considerations

The BLF8G27LS-100GV serves as a direct functional alternative within the same family, differing primarily in its SOT1244C package configuration. Designers must verify mechanical fit and pinout compatibility when substituting between these two variants.

BLF8G27LS-100V,118BLF8G27LS-100V,118

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