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The BLF8G27LS-100V is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems like 3GPP test model 1 with 64 DPCH. The device operates at VDS = 28 V and IDq = 900 mA, delivering 25 W output power with 17 dB gain and 28% drain efficiency. It includes integrated ESD protection and decoupling leads that provide a typical video bandwidth of 110 MHz.
Verify the specific package version required for your design, as the BLF8G27LS-100V corresponds to the SOT1244B earless flanged ceramic package. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts from Ampleon before finalizing procurement plans.
Select this component when designing broadband RF power amplifiers for cellular infrastructure. Ensure the application supports class-AB operation at 28 V and requires ruggedness against VSWR mismatches up to 10:1. Verify that the PCB layout accommodates the SOT1244B footprint and thermal requirements.
This part belongs to the BLF8 series of LDMOS transistors by Ampleon USA Inc., optimized for wireless communication infrastructure. It shares architectural similarities with the BLF8G27LS-100GV but utilizes the SOT1244B package instead of SOT1244C. Both variants target the same 2.5 GHz to 2.7 GHz spectrum for modern base station deployments.
The BLF8G27LS-100GV serves as a direct functional alternative within the same family, differing primarily in its SOT1244C package configuration. Designers must verify mechanical fit and pinout compatibility when substituting between these two variants.