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The BLF8G27LS-140V is a 140 W LDMOS power transistor designed for base station applications at frequencies from 2600 MHz to 2700 MHz. It features improved video bandwidth and low memory effects. Typical performance at VDS = 32 V, IDq = 1300 mA, and Tcase = 25 °C includes a power gain of 17.4 dB, drain efficiency of 30%, and an adjacent channel power ratio (ACPR) of -32 dBc under 2-carrier W-CDMA conditions. The device has a maximum drain-source voltage of 65 V and operates with a case temperature range of -40 °C to +125 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package version and manufacturing origin. Confirm RoHS compliance status as required by local regulations. Ensure the component matches the SOT1120B earless flanged ceramic package specification before procurement.
Select this component for high-efficiency RF power amplification in cellular infrastructure. Verify that the design accommodates the 65 V drain-source voltage limit and the thermal resistance requirements. Ensure impedance matching networks align with the specified source and load impedances for optimal gain and efficiency.
This part belongs to the BLF8G series of LDMOS power transistors manufactured by Ampleon USA Inc. The BLF8G27LS-140V specifically targets the 2.6 GHz band, offering higher power density compared to earlier generations. It utilizes an internally matched design to reduce external component count in base station power amplifier modules.
Consult official Ampleon substitution guides for verified replacements. Cross-reference pinouts and electrical characteristics carefully when considering alternative models.