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The BLF989EU is a 1000 W LDMOS RF power transistor designed for asymmetrical broadcast Doherty transmitter applications. It operates at 180 W DVB-T average power within the 400 MHz to 860 MHz frequency range. The device features a main amplifier and a peak amplifier section, housed in an SOT539AN flanged balanced ceramic package. Key electrical parameters include a drain-source voltage of 50 V, quiescent drain current of 600 mA, and typical power gain of 20 dB at 550 MHz. Drain efficiency reaches 52%, with a thermal resistance from junction to case of 0.28 K/W under DC conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant selection. Confirm that the procurement channel provides genuine Ampleon products with traceable manufacturing data. Ensure handling procedures comply with ESD sensitivity standards during storage and installation.
Select this component for UHF band applications requiring high linearity and efficiency in Doherty configurations. Verify that the system design supports the required 50 V drain supply and manages thermal loads consistent with the specified junction-to-case resistance. Ensure the application environment aligns with the non-automotive qualification status of the device.
The BLF989EU belongs to the Ampleon BLF989E series of UHF power LDMOS transistors. It is manufactured by Ampleon USA Inc. and utilizes the SOT539AN package outline. This part is distinct from the earless SOT539BN variant (BLF989ESU) and is intended for high-power broadcast infrastructure rather than consumer electronics.
The BLF989ESU serves as a functional equivalent utilizing the SOT539BN earless flanged package. Designers must verify mechanical mounting compatibility when substituting between the SOT539AN and SOT539BN variants.