BLL6G1214L-250,112

BLL6G1214L-250,112

$277.33
  • Description:RF MOSFET LDMOS 36V SOT502A
  • Series:-

SKU:4ad727c35795 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 36V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:15dB
  • Voltage - Test:36 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:250W
  • Voltage - Rated:89 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

Download product information

BLL6G1214L-250,112

Overview

The BLL6G1214L-250 is a 250 W LDMOS power transistor designed for L-band radar applications operating between 1.2 GHz and 1.4 GHz. It features an internally matched design within a flanged ceramic SOT502A package, facilitating ease of use in production test circuits. The device operates at a drain-source voltage of 36 V, delivering 250 W output power with a typical gain of 15 dB and drain efficiency of 45%. Key electrical parameters include a breakdown voltage of 91.5 V minimum, threshold voltage of 1.9 V typical, and thermal resistance from junction to case of 0.244 K/W.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated ESD protection mechanisms
  • High flexibility regarding pulse format operation
  • Excellent ruggedness under load mismatch conditions

Applications

  • L-band power amplifiers for radar systems
  • Pulsed radar transmitters in the 1.2 GHz to 1.4 GHz range

Procurement Notes

Verify the specific ordering suffix against current Ampleon documentation to ensure correct package variant and compliance status. Confirm that the requested quantity aligns with manufacturer distribution channels. Check for any recent revision history updates that may affect pinning or performance specifications before finalizing procurement orders.

Selection Notes

Select this component for L-band radar designs requiring high power density and robust performance. Ensure the application supports Class-AB operation with appropriate biasing currents. Verify thermal management capabilities to maintain junction temperature within limits during pulsed operation. Consider impedance matching networks based on provided typical impedance data for optimal power transfer.

Part Context

This part belongs to Ampleon's LDMOS L-band radar power transistor series. It utilizes advanced lateral diffusion metal-oxide semiconductor technology optimized for high efficiency and ruggedness. The product line targets demanding radar environments where reliability and consistent performance across wide frequency bands are critical requirements.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternative packages or manufacturers to ensure compatibility with existing board layouts and cooling solutions.

BLL6G1214L-250,112BLL6G1214L-250,112
$277.33
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