BLL8H0514L-130U

Overview

The BLL8H0514L-130U is a 130 W LDMOS transistor designed for pulsed applications in the 0.5 GHz to 1.4 GHz range. It operates with a drain-source voltage of 50 V and delivers 130 W output power at 1.2 GHz to 1.4 GHz, achieving 50% drain efficiency and 17 dB power gain. The device features integrated dual-side ESD protection and excellent ruggedness, supporting VSWR up to 5:1. Packaged in SOT1135A flanged ceramic, it includes two mounting holes and two leads.

Feature Summary

• Integrated dual-side electrostatic discharge (ESD) protection
• High flexibility regarding pulse formats
• Excellent thermal stability and ruggedness
• Designed for broadband operation from 0.5 GHz to 1.4 GHz

Applications

• Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variations. Ensure compatibility with SOT1135A mechanical dimensions and verify RoHS compliance status through current manufacturer declarations before procurement.

Selection Notes

Select this component for high-power pulsed RF driver stages requiring robust performance across a wide bandwidth. Consider the SOT1135A flanged package for effective heat dissipation and mechanical mounting stability in demanding industrial or communication environments.

Part Context

This part belongs to the BLL8H series of LDMOS transistors from Ampleon. It shares design characteristics with the BLL8H0514LS-130 but utilizes the SOT1135A flanged package variant instead of the earless SOT1135B version, offering distinct mechanical mounting options.

Replacement Considerations

The BLL8H0514LS-130 is a documented alternative within the same datasheet, differing only in package type (SOT1135B). Verify mechanical fit and lead configuration compatibility when substituting.