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The BLL8H0514LS-130U is a 130 W LDMOS transistor designed for pulsed applications in the 0.5 GHz to 1.4 GHz range. It features an earless flanged ceramic package (SOT1135B) with two leads and integrated dual-side ESD protection. The device operates at a drain-source voltage of 50 V, delivering 130 W output power with a typical drain efficiency of 50% and power gain of 17 dB at 1.2 GHz to 1.4 GHz. It exhibits excellent ruggedness, supporting a VSWR of 5:1 through all phases under specified conditions.
Verify the specific ordering suffix 'U' against official Ampleon documentation to confirm packaging or tape-and-reel specifications. Ensure the component matches the SOT1135B earless flanged ceramic package outline. Confirm RoHS compliance status as defined in the product data sheet before finalizing procurement orders.
Select this component for high-power pulsed amplifier designs requiring broadband coverage between 0.5 GHz and 1.4 GHz. Consider the SOT1135B package constraints and ensure the application circuit supports the required 50 V drain-source voltage and class-AB biasing conditions for optimal performance.
This part belongs to the BLL8H0514L(S)-130 series of LDMOS driver transistors. It shares core electrical characteristics with the BLL8H0514L-130 but utilizes the SOT1135B earless flanged ceramic package instead of the SOT1135A flanged package with mounting holes.
The BLL8H0514L-130 serves as a direct functional alternative within the same series, differing only in the physical package configuration (SOT1135A vs. SOT1135B). Verify mechanical fit and lead alignment when substituting.