BLP0427M9S20GZ

Overview

The BLP0427M9S20GZ is a plastic LDMOS power transistor designed for general-purpose applications across the 400 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers up to 20 W output power. The device features high efficiency, excellent ruggedness, and integrated ESD protection. Packaged in a TO-270-2G-1 configuration, it offers high power gain and thermal stability suitable for broadband RF amplification.

Feature Summary

• Broadband operation capability from 400 MHz to 2700 MHz
• Integrated electrostatic discharge (ESD) protection
• High power gain and drain efficiency
• Excellent thermal stability and ruggedness

Applications

• Radar systems
• Avionics communication equipment
• Broadcast transmitter applications
• Industrial, scientific, and medical (ISM) devices

Procurement Notes

Verify the specific package variant required, as the G suffix denotes the TO-270-2G-1 leaded package distinct from the surface-mount version. Confirm RoHS compliance status directly through official Ampleon channels or authorized distributors prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust performance across wide bandwidths without frequency-specific tuning constraints. Ensure the application circuit can maintain the case temperature at 25 °C during testing to achieve the specified typical performance metrics listed in the datasheet.

Part Context

This part belongs to the BLP0427M9S20 series manufactured by Ampleon. The 'G' suffix specifically identifies the TO-270-2G-1 leaded package variant, distinguishing it from the surface-mount TO-270-2F-1 version. Both variants share identical electrical characteristics and functional profiles.

Replacement Considerations

The BLP0427M9S20 serves as the direct non-leaded equivalent within the same product family. Verify pinout compatibility and physical footprint differences before substituting between the TO-270-2G-1 and TO-270-2F-1 packages.