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The BLP05H6250XRG is a 250 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It features integrated dual-sided ESD protection enabling Class C operation and complete switch-off capability. The device operates with a drain-source voltage of up to 135 V and a junction temperature limit of 225 °C. At 108 MHz with pulsed RF, it delivers 250 W output power with a typical drain efficiency of 75% and power gain of 27 dB. The component utilizes an HSOP4F plastic heatsink small outline package (SOT1224-2) with gull-wing leads.
Verify the specific ordering suffix against the manufacturer's current product data sheet to ensure correct package variant selection. Confirm that the procurement channel provides documentation compliant with RoHS Directive 2002/95/EC requirements. Ensure handling procedures adhere to ESD sensitivity standards such as ANSI/ESD S20.20 or IEC/ST 61340-5 during storage and assembly.
Select this component for designs requiring high power output within the HF to 600 MHz frequency range. Consider the thermal resistance characteristics and maximum junction temperature limits when designing the heatsinking solution. Verify impedance matching networks against the typical push-pull impedance values provided in the datasheet for optimal performance at the target operating frequency.
This part belongs to the BLP05H6250XR series of power LDMOS transistors manufactured by Ampleon. The XRG suffix specifically denotes the gull-wing lead configuration housed in the SOT1224-2 package, distinguishing it from the straight lead SOT1223-2 variant. Both variants share identical electrical specifications and are intended for similar high-power RF amplification tasks.
Consult the official Ampleon datasheet revision history for direct cross-references. The document indicates that the BLP05H6250XR v.4 supersedes previous versions like BLP05H6200XR#2. No alternative third-party substitute part numbers are documented in the provided source material.