BLP15M7160PY

BLP15M7160PY

$65.32
  • Description:RF MOSFET LDMOS 28V 4HSOPF
  • Series:-

SKU:f66ff6905bbd Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 4HSOPF
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:20dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:160W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1223-1
  • Supplier Device Package:4-HSOPF
  • Configuration:Dual, Common Source

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BLP15M7160PY

Overview

The BLP15M7160P is a 160W LDMOS RF power transistor designed for broadcast transmitter and industrial applications across the HF to 1500 MHz frequency range. It operates with a drain-source voltage of up to 65V and delivers a maximum pulsed output power of 160W at 860MHz. The device features a typical power gain of 19.4dB and a drain efficiency of 59.7% under class-B test conditions. It utilizes an HSOP4F (SOT1223-2) plastic heatsink package with four flat leads, ensuring robust performance in digital communication systems.

Feature Summary

  • Integrated ESD protection for enhanced reliability
  • Excellent ruggedness capable of withstanding high VSWR loads
  • High power gain and efficiency suitable for broadband applications

Applications

  • Communication transmitter applications in the HF to 1500 MHz frequency range
  • Industrial applications in the HF to 1500 MHz frequency range
  • Single product Doherty applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and compliance status. Confirm that the procurement channel provides valid traceability documentation. Check for any regional export control restrictions or licensing requirements before finalizing the purchase order.

Selection Notes

Select this component for designs requiring high power density within the HF to 1500 MHz spectrum. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.5 K/W at rated power. Verify that the gate-source voltage limits are respected to prevent damage during operation.

Part Context

This part belongs to the Ampleon BLP15 series of LDMOS transistors. It is specifically engineered for high-efficiency broadband applications. The device is manufactured by Ampleon Netherlands B.V. and is intended for use in demanding RF environments where reliability and power handling are critical.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical specifications and thermal characteristics.

BLP15M7160PYBLP15M7160PY
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