BLP15M9S70GZ

Overview

The Ampleon BLP15M9S70GZ is a general-purpose LDMOS RF power transistor designed for broadcast and ISM applications within the HF to 2 GHz band. It delivers a rated output power of 70 W with high drain efficiency, reaching up to 75% at 915 MHz and 70% at 1400 MHz under continuous wave conditions. The device features a TO-270-2G-1 surface-mount package with an exposed heatsink connected to the drain pin. Key electrical specifications include a maximum drain-source voltage of 65 V, a junction temperature limit of +225 °C, and a thermal resistance from junction to case of 1.0 K/W. It incorporates integrated dual-sided ESD protection and exhibits excellent ruggedness against load mismatches.

Feature Summary

• High efficiency and high power gain for effective energy conversion
• Integrated dual-sided electrostatic discharge (ESD) protection
• Excellent ruggedness capable of withstanding high VSWR loads
• Easy power control capabilities

Applications

• Industrial, scientific and medical (ISM) applications
• Broadcast transmitter applications
• RF power amplifiers for CW applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'Z' suffix indicates the component is supplied in a dry pack reel format with a minimum orderable quantity of 500 pieces. Confirm that the package type matches the required TO-270-2G-1 footprint. Ensure compliance with RoHS standards as specified by the manufacturer. Check the latest product status on the official website before design finalization.

Selection Notes

Select this component for designs requiring 70 W output power in the HF to 2 GHz range. Ensure the thermal management system can maintain the junction temperature below +225 °C given the 1.0 K/W thermal resistance. Verify that the gate-source voltage limits are respected during operation. Consider the device's Class-AB ruggedness if operating near VSWR extremes. Validate input and output impedance matching networks using the provided test circuit data.

Part Context

This part belongs to the BLP15M9S70G series of power LDMOS transistors manufactured by Ampleon. The BLP15M9S70GZ variant specifically denotes the reel-packaged version of the standard BLP15M9S70G die and assembly. It shares identical electrical characteristics and pinout with other suffixes like BLP15M9S70GXY but differs in packaging and handling requirements.

Replacement Considerations

Direct replacements must match the TO-270-2G-1 package and 70 W power rating. Verify compatibility with existing thermal interfaces due to the exposed drain pad. Check if alternative devices offer similar VSWR ruggedness and ESD protection levels. Ensure the replacement supports the required frequency range up to 2 GHz.