BLP7G07S-140PY

BLP7G07S-140PY

$44.14
  • Description:RF MOSFET LDMOS 28V 4HSOPF
  • Series:-

SKU:a08f6886a479 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 4HSOPF
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:724MHz ~ 769MHz
  • Gain:20.9dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.2 A
  • Power - Output:35W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1223-1
  • Supplier Device Package:4-HSOPF
  • Configuration:Dual, Common Source

Download product information

BLP7G07S-140PY

Overview

The BLP7G07S-140PY is a 140 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features integrated ESD protection, excellent ruggedness, high efficiency, and thermal stability. The device is internally matched for ease of use and complies with RoHS directives. Typical performance at VDS = 28V and IDq = 1200 mA includes a drain efficiency of 29.6% and power gain of 20.9 dB at 35 W output power (724–769 MHz). Limiting values specify a maximum drain-source voltage of 65 V and a junction temperature of 225 °C.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • Internally matched for simplified circuit design
  • High ruggedness capable of withstanding VSWR = 10:1
  • Compliant with Restriction of Hazardous Substances (RoHS)

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 700 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package version and compliance status. Ensure that the procurement channel provides valid traceability for this RF power component. Confirm that the received units match the SOT1223-2 package outline specified in the datasheet before integration into production designs.

Selection Notes

Select this component for broadband W-CDMA base station amplifier designs requiring high power output within the 700 MHz to 1000 MHz band. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the application environment supports the required gate-source quiescent voltage and current settings for optimal class-AB operation.

Part Context

This device belongs to the BLP7G07S series of LDMOS power transistors manufactured by Ampleon. It is specifically engineered for telecommunications infrastructure, providing robust performance in multi-carrier environments. The product utilizes an HSOP4F plastic heatsink small outline package to facilitate efficient heat dissipation and reliable mounting in base station modules.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinouts and electrical characteristics carefully when considering alternative components from other manufacturers to ensure compatibility with existing base station hardware designs.

FAQ

What is the maximum load mismatch the device can withstand?

The BLP7G07S-140P is capable of withstanding a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 10:1 through all phases under specified operating conditions.

What is the typical drain efficiency at rated power?

At an average output power of 35 W with a 2-carrier W-CDMA test signal, the typical drain efficiency is 29.6%.

Is the device suitable for automotive applications?

No, unless expressly stated otherwise, this product is not automotive qualified. It has not been tested or qualified according to automotive testing or application requirements.

BLP7G07S-140PYBLP7G07S-140PY
$44.14
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