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The BLP8G10S-45P is a dual N-channel LDMOS RF power transistor manufactured by Ampleon USA Inc. It operates within the 700 MHz to 1000 MHz frequency range and delivers an output power of 45 W at a drain voltage of 28 V. The device utilizes a 4-HSOP surface-mount package, specifically identified as 4-BESOP with dimensions of 0.173 inches (4.40 mm) in width. This component is designed for high-efficiency amplification in mobile broadband infrastructure applications.
Verify the current manufacturing status before procurement, as official documentation indicates this specific part number may be discontinued or subject to product change notifications. Confirm availability through authorized distributors and check for valid replacement alternatives if the primary unit is no longer in mass production.
Select this component for designs requiring 45 W output power within the 700 MHz to 1000 MHz band. Ensure the design accommodates the 4-HSOP footprint and provides adequate thermal management for the specified operating conditions. Verify that the 28 V supply voltage aligns with the system architecture requirements.
This device belongs to the BLP8 series of LDMOS transistors from Ampleon, which are engineered for mobile broadband applications. The series offers solutions ranging from driver stages to final power amplifiers, providing high performance and cost-efficiency for cellular infrastructure deployments across various frequency bands.
The datasheet lists BLP8G10S-45PG as a related variant within the same family. Designers should verify if the suffix 'G' denotes a RoHS-compliant version or other minor specification changes before substituting.