BLP8G10S-45PGY

BLP8G10S-45PGY

$30.06
  • Description:RF MOSFET LDMOS 28V 4HSOP
  • Series:-

SKU:eb2005af403c Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 4HSOP
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:952.5MHz ~ 957.5MHz
  • Gain:20.8dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:224 mA
  • Power - Output:2.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package:4-HSOP
  • Configuration:Dual, Common Source

Download product information

BLP8G10S-45PGY

Overview

The BLP8G10S-45PGY is a dual-path, 45 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It utilizes a plastic heatsink small outline package (SOT1224-4) with five leads. Key electrical parameters include a drain-source voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.85 K/W at 5 W output. In a class-AB production circuit at 960 MHz with 2-carrier W-CDMA, it delivers 2.5 W per section with 20.8 dB gain, 19.8% drain efficiency, and -49 dBc ACPR.

Feature Summary

  • High efficiency and high power gain
  • Excellent ruggedness against load mismatch
  • Broadband operation capability
  • Integrated ESD protection

Applications

  • W-CDMA
  • LTE
  • GSM

Procurement Notes

Verify the specific ordering suffix 'GY' against the official Ampleon datasheet, as the document primarily lists 'BLP8G10S-45PG'. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure handling procedures adhere to CDM Class C2A and HBM Class 1C electrostatic discharge sensitivity guidelines during assembly and storage.

Selection Notes

Select this component for broadband base station amplifiers requiring dual-path configuration within the 700 MHz to 1000 MHz range. Evaluate thermal management requirements based on the 0.85 K/W junction-to-case resistance. Verify impedance matching networks using the provided typical source and load impedance data for optimal performance across the target frequency band.

Part Context

This device belongs to the BLP8 series of power LDMOS transistors manufactured by Ampleon USA Inc. The 'PG' designation indicates a plastic heatsink small outline package variant (SOT1224-4). It serves as a robust solution for cellular infrastructure, offering high linearity and thermal stability compared to standard discrete RF transistors.

Replacement Considerations

The BLP8G10S-45P is the non-RoHS compliant equivalent in the SOT1223-4 package. Designers should verify pinout compatibility and thermal interface dimensions when substituting between the P and PG variants.

FAQ

What is the maximum junction temperature for the BLP8G10S-45PG?

The maximum junction temperature is 225 °C.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified test conditions.

What is the ESD sensitivity classification?

It is classified as CDM Class C2A and HBM Class 1C.

BLP8G10S-45PGYBLP8G10S-45PGY
$30.06
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