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The BLP8G21S-160PV is a dual-section LDMOS power transistor designed for base station applications operating between 1880 MHz and 2025 MHz. It delivers 160 W total output power with typical drain efficiency of 31% per section under 2-carrier W-CDMA conditions at VDS = 28 V and IDq = 600 mA. The device features high power gain (17.5 dB), integrated ESD protection, and decoupling leads to improve video bandwidth performance. It is housed in an HSOP6F plastic heatsink small outline package (SOT1221-2) with six flat leads.
Verify the specific ordering suffix 'Y' against official Ampleon documentation to confirm any variations in packaging or testing standards. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the HSOP6F package dimensions align with your PCB layout specifications before finalizing orders.
Select this component for designs requiring high power density and broadband operation within the specified frequency range. Consider the thermal resistance of 0.356 K/W when designing heat dissipation systems. Verify impedance matching networks using the provided typical load-pull data for optimal performance at target frequencies.
This part belongs to the BLP8G series of LDMOS transistors from Ampleon, targeting macro base station infrastructure. It utilizes advanced LDMOS technology to provide robust performance in multi-carrier environments. The device is optimized for Class-AB operation, balancing linearity and efficiency for modern wireless communication standards.
Consult official Ampleon substitution guides for verified alternatives. Cross-referencing with other BLP series devices requires careful evaluation of pin compatibility and electrical parameters to ensure functional equivalence without redesigning the host circuit.