BLP9G0722-20GZ

Overview

The BLP9G0722-20GZ is a plastic LDMOS power transistor designed for base station applications across frequencies from 100 MHz to 2700 MHz. It operates with a drain-source voltage of 65 V and delivers an output power at 1 dB gain compression (PL(1dB)) ranging from 42.5 dBm to 43.9 dBm. The device provides a typical power gain (Gp) of 19 dB and a drain efficiency (ηD) of 22% under pulsed CW conditions at 1842.5 MHz. It features integrated ESD protection compliant with HBM Class 2 and CDM Class C2A standards, housed in the SOT1483-1 package.

Feature Summary

• High efficiency and excellent thermal stability
• Excellent ruggedness designed for broadband operation
• Integrated electrostatic discharge (ESD) protection

Applications

• FDD/TDD LTE
• W-CDMA
• GSM EDGE
• WiMAX

Procurement Notes

Verify that the ordering suffix 'Z' corresponds to the specific packaging or tape-and-reel configuration defined by Ampleon's current production specifications. Confirm RoHS compliance status as per Directive 2002/95/EC before finalizing procurement orders.

Selection Notes

Select this component for wideband RF power amplifier designs requiring high linearity and robust performance across multiple cellular frequency bands. Ensure the application circuit supports the required quiescent current of 180 mA and utilizes appropriate impedance matching networks for the target operating frequency.

Part Context

This part belongs to the BLP9G0722 series of plastic LDMOS power transistors manufactured by Ampleon. It shares core electrical characteristics with the BLP9G0722-20 variant but differs in physical package configuration, utilizing the SOT1483-1 outline instead of the flat lead SOT1482-1.

Replacement Considerations

The BLP9G0722-20 serves as the primary functional equivalent within the same product family. Verify pinout compatibility between the SOT1483-1 and SOT1482-1 packages if substituting directly into existing layouts.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 225 °C.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified test conditions.

What is the gate-source threshold voltage range?

The gate-source threshold voltage (VGS(th)) typically ranges from 1.5 V to 2.0 V.