BLS2731-10,114

Description：RF TRANS NPN 75V 3.1GHZ CDFM2
Series：-

SKU:6a144a11817b Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 75V 3.1GHZ CDFM2
Series：-
Mfr：NXP USA Inc.
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：75V
Frequency - Transition：3.1GHz
Noise Figure (dB Typ @ f)：-
Gain：10dB
Power - Max：145W
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 250mA, 5V
Current - Collector (Ic) (Max)：1.5A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-445C
Supplier Device Package：CDFM2
Grade：-
Qualification：-

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BLS2731-10,114

Overview

The BLS2731-10,114 is an NPN silicon planar epitaxial microwave power transistor manufactured by Philips Semiconductors (NXP). It is housed in a hermetic SOT445C flange package with a ceramic cap and features internal input and output matching networks. Designed for pulsed operation, it delivers a typical load power of 12.5 W at 2.7 to 3.1 GHz with a collector efficiency of 45%. The device operates with a collector-base voltage of 40 V and supports a peak collector current of 1.5 A. Key electrical limits include a maximum junction temperature of 200 °C and a total power dissipation of 145 W under specified pulsed conditions.

Feature Summary

Internal input and output matching networks simplify circuit design
Emitter ballasting resistors enhance device ruggedness
Gold metallization ensures excellent reliability
Multicell geometry improves power sharing and reduces thermal resistance

Applications

Common base class-C pulsed power amplifier for radar applications in the 2.7 to 3.1 GHz band

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the specific ordering suffix matches the required package variant. Ensure handling procedures account for the presence of beryllium oxide within the ceramic cap, adhering strictly to safety regulations regarding chemical waste disposal and physical integrity maintenance.

Selection Notes

Select this component for high-frequency pulsed applications requiring integrated matching networks. Evaluate thermal management requirements against the 1.2 K/W junction-to-heatsink impedance. Verify compatibility with common base configurations and ensure drive levels support the specified peak collector current limits without exceeding absolute maximum ratings.

Part Context

This part belongs to the BLS2731 series of microwave power transistors from Philips/NXP. The series includes variants such as the BLS2731-50 and BLS2731-110, which share similar architectural features but differ in power handling capabilities and specific RF performance metrics tailored for different frequency bands and pulse widths.