BLS2731-110,114

BLS2731-110,114

  • Description:RF TRANS NPN 75V 3.1GHZ CDFM2
  • Series:-

SKU:ea9632deccc3 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 75V 3.1GHZ CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):75V
  • Frequency - Transition:3.1GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB
  • Power - Max:500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 3A, 5V
  • Current - Collector (Ic) (Max):12A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-423A
  • Supplier Device Package:CDFM2
  • Grade:-
  • Qualification:-

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BLS2731-110,114

Overview

The BLS2731-110 is an NPN silicon planar epitaxial microwave power transistor manufactured by Ampleon. It operates in the 2.7 to 3.1 GHz band and utilizes a 2-lead rectangular flange package (SOT423A) with a ceramic cap, featuring a common base connected to the flange. Designed for short and medium pulse applications, it incorporates internal input and output matching networks, emitter ballasting resistors, and gold metallization. In a common base class-C test circuit at 25 °C, it delivers over 110 W of load power with greater than 7 dB gain and over 35% efficiency.

Feature Summary

  • Internal input and output matching networks facilitate simplified circuit design.
  • Emitter ballasting resistors are integrated to improve device ruggedness.
  • Gold metallization ensures excellent reliability under operating conditions.
  • Interdigitated emitter-base structure provides high emitter efficiency.
  • Multicell geometry improves power sharing and reduces thermal resistance.

Applications

  • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact specifications. The product contains beryllium oxide; ensure handling procedures comply with safety regulations regarding toxic materials. Confirm that the component status matches current production requirements before initiating designs.

Selection Notes

Select this component for pulsed radar systems requiring operation within the 2.7 to 3.1 GHz frequency range. Ensure the application supports common base class-C topology and accommodates the required peak collector current of 12 A. Verify that the thermal management system can handle the specified total power dissipation limits under pulsed conditions.

Part Context

This device belongs to the BLS series of microwave power transistors from Ampleon. It represents a continuation of technology previously developed under Philips Semiconductors, as indicated by the datasheet history. The SOT423A package is standard for this family, providing a robust hermetic enclosure suitable for demanding RF environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference electrical parameters such as breakdown voltage, gain, and thermal impedance when evaluating alternative components.

BLS2731-110,114BLS2731-110,114

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