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The BLS2731-110 is an NPN silicon planar epitaxial microwave power transistor manufactured by Ampleon. It operates in the 2.7 to 3.1 GHz band and utilizes a 2-lead rectangular flange package (SOT423A) with a ceramic cap, featuring a common base connected to the flange. Designed for short and medium pulse applications, it incorporates internal input and output matching networks, emitter ballasting resistors, and gold metallization. In a common base class-C test circuit at 25 °C, it delivers over 110 W of load power with greater than 7 dB gain and over 35% efficiency.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact specifications. The product contains beryllium oxide; ensure handling procedures comply with safety regulations regarding toxic materials. Confirm that the component status matches current production requirements before initiating designs.
Select this component for pulsed radar systems requiring operation within the 2.7 to 3.1 GHz frequency range. Ensure the application supports common base class-C topology and accommodates the required peak collector current of 12 A. Verify that the thermal management system can handle the specified total power dissipation limits under pulsed conditions.
This device belongs to the BLS series of microwave power transistors from Ampleon. It represents a continuation of technology previously developed under Philips Semiconductors, as indicated by the datasheet history. The SOT423A package is standard for this family, providing a robust hermetic enclosure suitable for demanding RF environments.
Consult official Ampleon substitution guides for verified replacements. Cross-reference electrical parameters such as breakdown voltage, gain, and thermal impedance when evaluating alternative components.