BLS2731-20,114

Overview

The BLS2731-20,114 is an NPN silicon planar epitaxial microwave power transistor manufactured by Philips Semiconductors. It operates in the 2.7 to 3.1 GHz band with a collector-base voltage of 40 V and delivers 25 W typical output power at 40% efficiency. The device features internal input and output matching networks, emitter ballasting resistors, and gold metallization for reliability. Packaged in a hermetic SOT445C flange package with a ceramic cap, it includes a common base connected to the flange.

Feature Summary

• Internal input and output matching networks simplify circuit design
• Emitter ballasting resistors enhance device ruggedness
• Gold metallization ensures excellent long-term reliability
• Multicell geometry improves power sharing and reduces thermal resistance

Applications

• Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status against the November 25, 1998 specification date. Ensure handling procedures account for beryllium oxide content within the package structure. Validate supply chain documentation matches the original Philips Semiconductors manufacturing records.

Selection Notes

Select this component for short and medium pulse applications requiring high emitter efficiency. The interdigitated emitter-base structure supports robust performance under pulsed conditions. Evaluate thermal impedance characteristics relative to specific heatsink requirements. Consider the fixed operating frequency range when designing RF front-end architectures.

Part Context

This part belongs to the BLS series of microwave power transistors originally developed by Philips Semiconductors. The BLS2731-20 variant specifically targets X-band radar systems. Subsequent corporate restructuring transferred these assets to Ampleon, which continues to support legacy specifications for existing infrastructure maintenance.

Replacement Considerations

Direct replacements must match the SOT445C outline and electrical parameters. Verify that substitute devices maintain compatible internal matching network configurations. Cross-reference thermal impedance values to ensure equivalent heat dissipation capabilities under identical pulsed duty cycles.