BLS3135-10,114

Description：RF TRANS NPN 75V 3.5GHZ CDFM2
Series：-

SKU:c9c7677ff91c Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 75V 3.5GHZ CDFM2
Series：-
Mfr：NXP USA Inc.
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：75V
Frequency - Transition：3.5GHz
Noise Figure (dB Typ @ f)：-
Gain：9dB
Power - Max：34W
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 250mA, 5V
Current - Collector (Ic) (Max)：1.5A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-445C
Supplier Device Package：CDFM2
Grade：-
Qualification：-

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BLS3135-10,114

Overview

The BLS3135-10 is an NPN silicon planar epitaxial microwave power transistor designed for short and medium pulse applications. It operates in the 3.1 to 3.5 GHz frequency range with a collector-base voltage of 40 V, delivering at least 10 W of pulsed load power. The device features internal input and output matching networks, emitter ballasting resistors, and gold metallization for reliability. Packaged in a hermetic SOT445C flange package with a ceramic cap, it utilizes a multicell geometry to improve power sharing and reduce thermal resistance.

Feature Summary

Internal input and output matching networks simplify circuit design
Emitter ballasting resistors enhance device ruggedness
Gold metallization ensures excellent long-term reliability
Multicell geometry improves power sharing and reduces thermal resistance

Applications

Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the physical unit matches the SOT445C outline dimensions and pin configuration. Ensure handling procedures strictly follow safety guidelines regarding beryllium oxide content, as the product contains this material within its ceramic cap structure.

Selection Notes

Select this component for high-frequency pulsed power amplification where internal matching simplifies layout. Evaluate thermal impedance requirements against specific pulse widths (100 μs to 300 μs) to ensure junction temperature remains within the 200 °C limit. Verify that the application supports common base configurations and can accommodate the required drive power levels for optimal efficiency.

Part Context

This part belongs to the Philips Semiconductors (now NXP) BLS series of microwave power transistors. These devices are engineered for robust performance in demanding RF environments, utilizing advanced silicon planar epitaxial technology. The series emphasizes reliability through specialized packaging and internal structural optimizations suitable for industrial and military-grade radar systems.