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Product Detailed Parameters
- Description：RF MOSFET LDMOS 32V CDFM2
- Series：-
- Mfr：Ampleon USA Inc.
- Package：Tray
- Technology：LDMOS
- Frequency：2.7GHz ~ 3.1GHz
- Gain：15dB
- Voltage - Test：32 V
- Current Rating (Amps)：3.5A
- Noise Figure：-
- Current - Test：25 mA
- Power - Output：6W
- Voltage - Rated：60 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-975C
- Supplier Device Package：CDFM2
- Configuration：-
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Overview
The BLS6G2731-6G is a 6 W LDMOS power transistor designed for S-Band radar applications in the 2.7 GHz to 3.1 GHz range. It operates with a drain-source voltage of 32 V, delivering an output power of 6 W, a power gain of 15 dB, and a drain efficiency of 33%. The device features a maximum drain-source breakdown voltage of 60 V and a gate-source threshold voltage ranging from 1.4 V to 2.4 V. Packaged in the flanged ceramic SOT975C format, it includes integrated ESD protection and exhibits excellent thermal stability.
Feature Summary
- Integrated ESD protection
- Internally matched for ease of use
- High flexibility with respect to pulse formats
- Excellent ruggedness
Applications
- S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range
Procurement Notes
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations or compliance updates. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS compliance status directly with the manufacturer's current product data sheet before finalizing orders.
Selection Notes
Select this component for pulsed RF radar systems requiring high efficiency and broadband operation within the specified S-Band frequencies. Evaluate thermal resistance requirements based on the intended pulse width and duty cycle conditions. Ensure the design accommodates the internal matching network characteristics provided in the impedance tables.
Part Context
This part belongs to the BLS series of LDMOS transistors manufactured by Ampleon. It is specifically engineered for radar power amplifier applications. The device utilizes silicon technology and is housed in a robust ceramic package suitable for high-power RF environments.
Replacement Considerations
Consult official Ampleon substitution guides for verified alternatives. Cross-reference electrical parameters such as output power, frequency range, and package dimensions when evaluating potential replacements.
