BLS7G3135LS-350P,1

$729.30

Description：RF FET LDMOS 65V 10DB SOT539B
Series：-

SKU:cee4fb0ead3d Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF FET LDMOS 65V 10DB SOT539B
Series：-
Mfr：Ampleon USA Inc.
Package：Bulk
Technology：LDMOS
Frequency：3.5GHz
Gain：10dB
Voltage - Test：32 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：200 mA
Power - Output：320W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-539B
Supplier Device Package：SOT539B
Configuration：Dual, Common Source

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BLS7G3135LS-350P,1

Overview

The BLS7G3135LS-350P is an LDMOS power transistor designed for S-band radar applications within the 3.1 GHz to 3.5 GHz frequency range. It delivers a typical output power of 350 W at VDS = 32 V and IDq = 200 mA in class-AB operation. The device features a drain-source breakdown voltage (V(BR)DSS) of 65 V, a gate-source threshold voltage (VGS(th)) ranging from 1.5 V to 2.3 V, and a forward transconductance (gfs) of 16.2 S. It operates with a maximum junction temperature of 225 °C and utilizes an internally matched earless flanged balanced ceramic package (SOT539B).

Feature Summary

Internally matched for ease of use
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness

Applications

S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status through current manufacturer declarations. Validate that the component meets absolute maximum rating limits for your specific thermal and electrical operating conditions before integration.

Selection Notes

Select this component for high-power S-band radar systems requiring robust performance in the 3.1 GHz to 3.5 GHz band. Ensure the design accommodates the 32 V drain supply and 200 mA quiescent current specified for optimal efficiency. Verify thermal management capabilities to maintain junction temperatures below the 225 °C limit during pulsed operation.

Part Context

This part belongs to the BLS7G3135L series of LDMOS power transistors manufactured by Ampleon. The 'LS' variant specifically denotes the earless flanged balanced ceramic package (SOT539B), distinguishing it from the standard flanged version with mounting holes. Both variants share identical electrical characteristics and are intended for similar radar amplifier applications.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinout configurations between SOT539A and SOT539B packages if considering mechanical alternatives.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.