BLS8G2731LS-400PU

Overview

The BLS8G2731LS-400PU is an LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.1 GHz. It delivers a typical output power of 590 W at 2 dB gain compression with 47% drain efficiency. The device features a 65 V drain-source breakdown voltage, 13 dB power gain, and 0.067 K/W transient thermal impedance. Packaged in the earless flanged balanced ceramic SOT539B format, it integrates dual-sided ESD protection and internal matching networks to facilitate circuit design.

Feature Summary

• High efficiency and excellent ruggedness suitable for demanding pulse formats
• Integrated dual-sided ESD protection enabling excellent off-state isolation
• Internally matched for ease of use and high flexibility regarding pulse formats

Applications

• S-band radar systems operating within the 2.7 GHz to 3.1 GHz frequency range

Procurement Notes

Verify the specific suffix 'U' against official Ampleon documentation, as standard datasheets list 'BLS8G2731LS-400P'. Confirm RoHS compliance status and ensure handling precautions for electrostatic sensitive devices are strictly followed during installation.

Selection Notes

Select this component for S-band radar designs requiring high power density and robust load mismatch tolerance up to 10:1 VSWR. Ensure the application utilizes the specified class-AB narrow band production circuit conditions for optimal performance metrics.

Part Context

This part belongs to the BLS8G2731L(S)-400P family from Ampleon. The LS variant specifically denotes the earless flanged balanced ceramic package (SOT539B), distinguishing it from the flanged version with mounting holes (SOT539A).

Replacement Considerations

The BLS8G2731L-400P serves as a direct functional equivalent within the same product family, differing only in the physical package configuration.